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PD -94030A
IRF7752
HEXFET(R) Power MOSFET
l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel
VDSS
30V
RDS(on) max
0.030@VGS = 10V 0.036@VGS = 4.5V
ID
4.6A 3.9A
Description
HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner
1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2
with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the TSSOP-8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
30 4.6 3.7 37 1.0 0.64 8.0 12 -55 to + 150
Units
V A
W mW/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
125
Units
C/W
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3/25/01
IRF7752
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 30 --- --- --- 0.60 12 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.030 --- --- --- --- --- --- --- --- 9.0 2.5 2.6 7.2 9.1 25 11 861 210 25
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = 1mA 0.030 VGS = 10V, ID = 4.6A 0.036 VGS = 4.5V, ID = 3.9A 2.0 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 4.6A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C -200 VGS = -12V nA 200 VGS = 12V --- ID = 4.6A --- nC VDS = 24V --- VGS = 4.5V --- VDD = 15V --- ID = 1.0A ns --- RG = 6.0 --- VGS = 10V --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 25 23 0.91 A 37 1.3 --- --- V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 0.91A, VGS = 0V TJ = 25C, IF = 0.91A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Pulse width 300s; duty cycle 2%.
2
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IRF7752
100
VGS TOP 10.0V 5.0V 4.5V 3.3V 3.0V 2.7V 2.5V BOTTOM 2.3V
100
VGS 10.0V 5.0V 4.5V 3.3V 3.0V 2.7V 2.5V BOTTOM 2.3V TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
2.3V
1
2.3V
1
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.01 0.1 1 10 100 0.1 0.01 0.1
20s PULSE WIDTH Tj = 150C
1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID = 4.6A
I D , Drain-to-Source Current (A)
1.5
TJ = 150 C
10
1.0
TJ = 25 C
0.5
1 2.0
V DS = 15V 20s PULSE WIDTH 2.3 2.7 3.0 3.3 3.7 4.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature C) (
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7752
1400 1200
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss =
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
10
ID = 4.6A
V DS = 24V V DS = 15V
8
C, Capacitance (pF)
1000
Ciss
800 600 400 200
6
4
Coss
2
Crss
0 1 10 100
0 0 4 8 12 16 20
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
TJ = 150 C
ID , Drain Current (A)
100
10us 10 100us 1ms 1 10ms
TJ = 25 C
1
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
0.1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7752
5.0
VDS
4.0
RD
VGS RG
ID , Drain Current (A)
D.U.T.
+
-VDD
3.0
10V
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )
100
D = 0.50 0.20 0.10
10
0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100
1
0.1 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7752
RDS ( on ) , Drain-to-Source On Resistance ( )
( RDS(on), Drain-to -Source On Resistance )
0.080
0.030
VGS = 4.5V
0.060
0.040
0.025
0.020
ID = 4.6A
VGS = 10V 0.020 0 5 10 15 20 25 30 35 40 ID , Drain Current ( A )
0.000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate Voltage
Fig 12. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10 V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF7752
TSSOP-8 Package Outline
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01
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